Capacitor architectures in semiconductor devices

ABSTRACT

Embodiments herein describe techniques for a semiconductor device including a three dimensional capacitor. The three dimensional capacitor includes a pole, and one or more capacitor units stacked around the pole. A capacitor unit of the one or more capacitor units includes a first electrode surrounding and coupled to the pole, a dielectric layer surrounding the first electrode, and a second electrode surrounding the dielectric layer. Other embodiments may be described and/or claimed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.17/578,043, filed Jan. 18, 2022, which is a division of U.S. patentapplication Ser. No. 16/828,497, filed on Mar. 24, 2020, the entirecontents of which are hereby incorporated by reference herein.

FIELD

Embodiments of the present disclosure generally relate to the field ofsemiconductor devices, and more particularly, to capacitors insemiconductor devices.

BACKGROUND

Capacitors are important parts of integrated circuits (IC) andsemiconductor devices. For example, capacitors may be used asinformation storage cells in memory devices. A memory device, e.g., adynamic random access memory (DRAM) array, may include a plurality ofmemory cells, where a memory cell may include a selector, e.g., atransistor, to control the access to a storage cell, e.g., a capacitor.In addition to memory devices, capacitors may be used in many otherapplications, such as energy storage devices. In particular, supercapacitors (SCs) are gaining ground as energy storage devices due totheir high power density, good performance, and long maintenance-freelifetime. Currently, capacitors or super capacitors may be fabricatedwithin the backend interconnect structure, which has limited layoutspaces. Therefore, current capacitors may have limited capacity, leadingto insufficient power density or information capacity.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be readily understood by the following detaileddescription in conjunction with the accompanying drawings. To facilitatethis description, like reference numerals designate like structuralelements. Embodiments are illustrated by way of example and not by wayof limitation in the figures of the accompanying drawings.

FIGS. 1(a)-1(e) schematically illustrate diagrams of a semiconductordevice including a three dimensional capacitor having one or morecapacitor units stacked around a pole, in accordance with someembodiments.

FIG. 2 illustrates a process for forming a semiconductor deviceincluding a three dimensional capacitor having one or more capacitorunits stacked around a pole, in accordance with some embodiments.

FIGS. 3(a)-3(b) schematically illustrate diagrams of semiconductordevices including a three dimensional capacitor having one or morecapacitor units stacked around a pole, in accordance with someembodiments.

FIG. 4 schematically illustrates an interposer implementing one or moreembodiments of the disclosure, in accordance with some embodiments.

FIG. 5 schematically illustrates a computing device built in accordancewith an embodiment of the disclosure, in accordance with someembodiments.

DETAILED DESCRIPTION

Front-end-of-line (FEOL) semiconductor processing and structures mayrefer to a first portion of IC fabrication where individual devices(e.g., transistors, capacitors, resistors, etc.) are patterned in asemiconductor substrate or layer. FEOL generally covers everything up to(but not including) the deposition of metal interconnect layers. Atransistor formed in FEOL may also be referred to as a front-endtransistor. Following the last FEOL operation, the result is typically awafer with isolated transistors (e.g., without any wires). Back end ofline (BEOL) semiconductor processing and structures may refer to asecond portion of IC fabrication where the individual devices (e.g.,transistors, capacitors, resistors, etc.) are interconnected with wiringon the wafer, e.g., the metallization layer or layers. BEOL includesmetal contacts, dielectrics layers, metal levels, and bonding sites forchip-to-package connections. In the BEOL part of the fabrication, metalcontacts, pads, interconnect wires, vias, and dielectric structures maybe formed. For modern IC processes, more than 10 metal layers may beadded in the BEOL.

Capacitors are important parts of integrated circuits (IC) andsemiconductor devices, e.g., to be used as information storage cells inmemory devices, or energy storage devices. Capacitors may have differentarchitectures. For example, a metal-insulator-metal (MIM) capacitorincludes two metal plates with an insulator between the plates.Currently, MIM capacitors are normally fabricated within theinterconnect structure at BEOL, e.g., typically above the metal layer 5or 7, which has limited spaces. Since the capacitance of a capacitor islinearly proportional to the area of the capacitor, the lack of layoutspaces at the BEOL restricts the number of conventional MIM capacitorsplaced there, leading to insufficient power density when capacitors areused as energy storage devices. Further, being in the BEOL, thefabrication process is restricted by the thermal budget the devices canhandle. On the other hand, in pursuit of Moore's low, the modern dayprocessors are becoming increasingly faster and power hungry. Forexample, with the advent of 5G technology and three dimensionalintegration stacks for artificial intelligence (AI) and machine learning(ML) processors, the power density will be a major challenge forcapacitors when used as energy storage devices. Similar capacitychallenges exist when capacitors are used as information storagedevices.

Embodiments herein present capacitors that can provide improved powerdensity for the modern day processors or information storage capacity.Capacitors are formed with a corrugated style structure to increase thesurface area of the capacitors. Furthermore, in some embodiments,capacitors may integrate a high efficiency solid state electrolyte (SSE)instead of a high-k dielectric to further increase the energy capacityto make it a super capacitor. As a result, embodiments herein mayinclude an electric double layer capacitor (EDLC) based supercapacitorarray or Redox faradaic reaction based pseudocapacitor array. Theefficacy of the SSE capacitors will enable an electrical double layeracross electrode-SSE surface for an EDLC. In case of a pseudo capacitor,the SSE will enable Redox reactions across the same interface.Furthermore, a capacitor array can be vertically integrated into a 3dimensional interposer or in the backside of the processor. In addition,the capacitor may be connected to the processor directly or indirectlythrough power rails. As a result, embodiments herein may enableprocessors to operate at improved frequency while running on batteryincluding the capacitors presented herein. Customers will be able totake advantage of the full processing power of the modern processorsremotely without connection to a wired power source.

Embodiments herein present a semiconductor device that includes a threedimensional capacitor. The three dimensional capacitor includes a pole,and one or more capacitor units stacked around the pole. A capacitorunit of the one or more capacitor units includes a first electrodesurrounding and coupled to the pole, a dielectric layer surrounding thefirst electrode, and a second electrode surrounding the dielectriclayer.

Embodiments herein present a method for forming a semiconductor device.The method includes forming a transistor, where the transistor includesa channel along a first direction. The method further includes forming apole placed in a second direction orthogonal to the first direction,forming a first electrode surrounding and coupled to the pole, forming adielectric layer surrounding the first electrode, and forming a secondelectrode surrounding the dielectric layer. The first electrode, thedielectric layer, and the second electrode form a capacitor unit aroundthe pole.

Embodiments herein present a computing device, which includes atransistor including a channel along a first direction located in asemiconductor device, and a three dimensional capacitor coupled to thetransistor. The three dimensional capacitor includes a pole placed in asecond direction orthogonal to the first direction, and one or morecapacitor units stacked around the pole. A capacitor unit of the one ormore capacitor units includes a first electrode surrounding and coupledto the pole, a dielectric layer surrounding the first electrode, and asecond electrode surrounding the dielectric layer.

In the following description, various aspects of the illustrativeimplementations will be described using terms commonly employed by thoseskilled in the art to convey the substance of their work to othersskilled in the art. However, it will be apparent to those skilled in theart that the present disclosure may be practiced with only some of thedescribed aspects. For purposes of explanation, specific numbers,materials and configurations are set forth in order to provide athorough understanding of the illustrative implementations. However, itwill be apparent to one skilled in the art that the present disclosuremay be practiced without the specific details. In other instances,well-known features are omitted or simplified in order not to obscurethe illustrative implementations.

Various operations will be described as multiple discrete operations, inturn, in a manner that is most helpful in understanding the presentdisclosure. However, the order of description should not be construed toimply that these operations are necessarily order dependent. Inparticular, these operations may not be performed in the order ofpresentation. For the purposes of the present disclosure, the phrase “Aand/or B” means (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

The terms “over,” “under,” “between,” “above,” and “on” as used hereinmay refer to a relative position of one material layer or component withrespect to other layers or components. For example, one layer disposedover or under another layer may be directly in contact with the otherlayer or may have one or more intervening layers. Moreover, one layerdisposed between two layers may be directly in contact with the twolayers or may have one or more intervening layers. In contrast, a firstlayer “on” a second layer is in direct contact with that second layer.Similarly, unless explicitly stated otherwise, one feature disposedbetween two features may be in direct contact with the adjacent featuresor may have one or more intervening features.

The description may use the phrases “in an embodiment,” or “inembodiments,” which may each refer to one or more of the same ordifferent embodiments. Furthermore, the terms “comprising,” “including,”“having,” and the like, as used with respect to embodiments of thepresent disclosure, are synonymous.

The term “coupled with,” along with its derivatives, may be used herein.“Coupled” may mean one or more of the following. “Coupled” may mean thattwo or more elements are in direct physical or electrical contact.However, “coupled” may also mean that two or more elements indirectlycontact each other, but yet still cooperate or interact with each other,and may mean that one or more other elements are coupled or connectedbetween the elements that are said to be coupled with each other. Theterm “directly coupled” may mean that two or more elements are in directcontact.

In various embodiments, the phrase “a first feature formed, deposited,or otherwise disposed on a second feature” may mean that the firstfeature is formed, deposited, or disposed over the second feature, andat least a part of the first feature may be in direct contact (e.g.,direct physical and/or electrical contact) or indirect contact (e.g.,having one or more other features between the first feature and thesecond feature) with at least a part of the second feature.

Where the disclosure recites “a” or “a first” element or the equivalentthereof, such disclosure includes one or more such elements, neitherrequiring nor excluding two or more such elements. Further, ordinalindicators (e.g., first, second, or third) for identified elements areused to distinguish between the elements, and do not indicate or imply arequired or limited number of such elements, nor do they indicate aparticular position or order of such elements unless otherwisespecifically stated.

As used herein, the term “circuitry” may refer to, be part of, orinclude an Application Specific Integrated Circuit (ASIC), an electroniccircuit, a processor (shared, dedicated, or group), and/or memory(shared, dedicated, or group) that execute one or more software orfirmware programs, a combinational logic circuit, and/or other suitablehardware components that provide the described functionality. As usedherein, “computer-implemented method” may refer to any method executedby one or more processors, a computer system having one or moreprocessors, a mobile device such as a smartphone (which may include oneor more processors), a tablet, a laptop computer, a set-top box, agaming console, and so forth.

Implementations of the disclosure may be formed or carried out on asubstrate, such as a semiconductor substrate. In one implementation, thesemiconductor substrate may be a crystalline substrate formed using abulk silicon or a silicon-on-insulator substructure. In otherimplementations, the semiconductor substrate may be formed usingalternate materials, which may or may not be combined with silicon, thatinclude but are not limited to germanium, indium antimonide, leadtelluride, indium arsenide, indium phosphide, gallium arsenide, indiumgallium arsenide, gallium antimonide, or other combinations of groupIII-V or group IV materials. Although a few examples of materials fromwhich the substrate may be formed are described here, any material thatmay serve as a foundation upon which a semiconductor device may be builtfalls within the spirit and scope of the present disclosure.

A plurality of transistors, such as metal-oxide-semiconductorfield-effect transistors (MOSFET or simply MOS transistors), may befabricated on the substrate. In various implementations of thedisclosure, the MOS transistors may be planar transistors, nonplanartransistors, or a combination of both. Nonplanar transistors includeFinFET transistors such as double-gate transistors and tri-gatetransistors, and wrap-around or all-around gate transistors such asnanoribbon and nanowire transistors. Although the implementationsdescribed herein may illustrate only planar transistors, it should benoted that the disclosure may also be carried out using nonplanartransistors.

Each MOS transistor includes a gate stack formed of at least two layers,a gate dielectric layer and a gate electrode layer. The gate dielectriclayer may include one layer or a stack of layers. The one or more layersmay include silicon oxide, silicon dioxide (SiO₂) and/or a high-kdielectric material. The high-k dielectric material may include elementssuch as hafnium, silicon, oxygen, titanium, tantalum, lanthanum,aluminum, zirconium, barium, strontium, yttrium, lead, scandium,niobium, and zinc. Examples of high-k materials that may be used in thegate dielectric layer include, but are not limited to, hafnium oxide,hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide,zirconium oxide, zirconium silicon oxide, tantalum oxide, titaniumoxide, barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide, and lead zinc niobate. In some embodiments, an annealing processmay be carried out on the gate dielectric layer to improve its qualitywhen a high-k material is used.

The gate electrode layer is formed on the gate dielectric layer and mayconsist of at least one P-type work function metal or N-type workfunction metal, depending on whether the transistor is to be a PMOS oran NMOS transistor. In some implementations, the gate electrode layermay consist of a stack of two or more metal layers, where one or moremetal layers are work function metal layers and at least one metal layeris a fill metal layer. Further metal layers may be included for otherpurposes, such as a barrier layer.

For a PMOS transistor, metals that may be used for the gate electrodeinclude, but are not limited to, ruthenium, palladium, platinum, cobalt,nickel, and conductive metal oxides, e.g., ruthenium oxide. A P-typemetal layer will enable the formation of a PMOS gate electrode with awork function that is between about 4.9 eV and about 5.2 eV. For an NMOStransistor, metals that may be used for the gate electrode include, butare not limited to, hafnium, zirconium, titanium, tantalum, aluminum,alloys of these metals, and carbides of these metals such as hafniumcarbide, zirconium carbide, titanium carbide, tantalum carbide, andaluminum carbide. An N-type metal layer will enable the formation of anNMOS gate electrode with a work function that is between about 3.9 eVand about 4.2 eV.

In some implementations, when viewed as a cross-section of thetransistor along the source-channel-drain direction, the gate electrodemay consist of a “U”-shaped structure that includes a bottom portionsubstantially parallel to the surface of the substrate and two sidewallportions that are substantially perpendicular to the top surface of thesubstrate. In another implementation, at least one of the metal layersthat form the gate electrode may simply be a planar layer that issubstantially parallel to the top surface of the substrate and does notinclude sidewall portions substantially perpendicular to the top surfaceof the substrate. In further implementations of the disclosure, the gateelectrode may consist of a combination of U-shaped structures andplanar, non-U-shaped structures. For example, the gate electrode mayconsist of one or more U-shaped metal layers formed atop one or moreplanar, non-U-shaped layers.

In some implementations of the disclosure, a pair of sidewall spacersmay be formed on opposing sides of the gate stack that bracket the gatestack. The sidewall spacers may be formed from a material such assilicon nitride, silicon oxide, silicon carbide, silicon nitride dopedwith carbon, and silicon oxynitride. Processes for forming sidewallspacers are well known in the art and generally include deposition andetching process operations. In an alternate implementation, a pluralityof spacer pairs may be used, for instance, two pairs, three pairs, orfour pairs of sidewall spacers may be formed on opposing sides of thegate stack.

As is well known in the art, source and drain regions are formed withinthe substrate adjacent to the gate stack of each MOS transistor. Thesource and drain regions are generally formed using either animplantation/diffusion process or an etching/deposition process. In theformer process, dopants such as boron, aluminum, antimony, phosphorous,or arsenic may be ion-implanted into the substrate to form the sourceand drain regions. An annealing process that activates the dopants andcauses them to diffuse further into the substrate typically follows theion implantation process. In the latter process, the substrate may firstbe etched to form recesses at the locations of the source and drainregions. An epitaxial deposition process may then be carried out to fillthe recesses with material that is used to fabricate the source anddrain regions. In some implementations, the source and drain regions maybe fabricated using a silicon alloy such as silicon germanium or siliconcarbide. In some implementations the epitaxially deposited silicon alloymay be doped in situ with dopants such as boron, arsenic, orphosphorous. In further embodiments, the source and drain regions may beformed using one or more alternate semiconductor materials such asgermanium or a group III-V material or alloy. And in furtherembodiments, one or more layers of metal and/or metal alloys may be usedto form the source and drain regions.

One or more interlayer dielectrics (ILD) are deposited over the MOStransistors. The ILD layers may be formed using dielectric materialsknown for their applicability in integrated circuit structures, such aslow-k dielectric materials. Examples of dielectric materials that may beused include, but are not limited to, silicon dioxide (SiO₂), carbondoped oxide (CDO), silicon nitride, organic polymers such asperfluorocyclobutane or polytetrafluoroethylene, fluorosilicate glass(FSG), and organosilicates such as silsesquioxane, siloxane, ororganosilicate glass. The ILD layers may include pores or air gaps tofurther reduce their dielectric constant.

FIGS. 1(a)-1(e) schematically illustrate diagrams of a semiconductordevice 100 including a three dimensional capacitor having one or morecapacitor units stacked around a pole, in accordance with someembodiments. FIGS. 1(a)-1(b) show the device 100 and a capacitor 110 ina cross section view and top down view. FIG. 1(c) shows the device 100to include an array of three dimensional capacitors in a cross sectionview. FIGS. 1(d) and 1(e) show the device 100 and an array of threedimensional capacitors in top down view. A three dimensional capacitormay be simply referred to as a capacitor.

In embodiments, as shown in FIG. 1(a), the semiconductor device 100includes a substrate 131, and a transistor 130 formed within thesubstrate 131 or above the substrate 131. The capacitor 110 may beformed further above the transistor 130. In some embodiments, thetransistor 130 may be a FEOL transistor, e.g., a transistor of aprocessor formed within the substrate 131. In some other embodiments,the transistor 130 may be a BEOL transistor, e.g., athin-film-transistor (TFT), which may be a part of a memory device. Thetransistor 130 includes a channel 134, a source electrode 133, and adrain electrode 135. The channel 134 may be along a horizontal direction132 from the source electrode 133 to the drain electrode 135 through thechannel 134. The capacitor 110 may be an information storage cellcontrolled by the transistor 130, or an energy storage device to supplypower to the transistor 130.

In embodiments, the capacitor 110 includes a pole 112, and one or morecapacitor units, e.g., a capacitor unit 111, a capacitor unit 113, andmore, stacked around the pole 112, where the pole 112 is placed in asecond direction 142 orthogonal to the first direction 132. The pole 112may include various materials, e.g., a conductive material, a dielectricmaterial, an insulator, or other materials. As shown in FIG. 1(b), thecapacitor unit 111 and the capacitor unit 113 may form one pair, and thecapacitor 110 may include 128 pairs of such capacitor units. FIG. 1(b)is shown only as an example. There may be other number of capacitorunits stacked around the pole.

A capacitor unit, e.g., the capacitor unit 111, may include a firstelectrode 103 surrounding and coupled to the pole 112, a dielectriclayer 105 surrounding the first electrode 103, and a second electrode101 surrounding the dielectric layer 105. In some embodiments, thecapacitor unit 111 may further include an interface layer 107 betweenthe first electrode 103 and the dielectric layer 105, or an interfacelayer 109 between the dielectric layer 105 and the second electrode 101.The interface layer 107 or the interface layer 109 is optional and maynot be included in all capacitor units. The capacitor unit 113 alsoincludes a first electrode 123 surrounding and coupled to the pole 112,a dielectric layer 125 surrounding the first electrode 123, and a secondelectrode 121 surrounding the dielectric layer 125. The capacitor unit113 may further include an interface layer 127 between the firstelectrode 123 and the dielectric layer 125, or an interface layer 129between the dielectric layer 125 and the second electrode 121. In someembodiments, as shown in FIG. 1(b), a height of the capacitor unit 111,e.g., a height of the first electrode 103 may be around 0.05 um, while aheight of the first electrode 123 may be around 0.05 um as well.

In some embodiments, a capacitor unit, e.g., the capacitor unit 111, mayhave the pole 112 to act as the first electrode 103. In some otherembodiments, the first electrode may be an additional componentsurrounding the pole. For example, for the capacitor unit 113, to have alarger area, the first electrode 123 is a component coupled to the pole112 and extended into the direction 132 orthogonal to the pole 112.

In some embodiments, the capacitor unit 111 and the capacitor unit 113may share the dielectric layer, the interface layers, or electrodes. Asshown in FIG. 1(a), the dielectric layer 105 of the capacitor unit 111and the dielectric layer 125 of the capacitor unit 113 form a continuousdielectric layer conformally surrounding the pole 112 and the firstelectrode 103 of the capacitor unit 111 and the first electrode 123 ofthe capacitor unit 113. Similarly, the interface layer 107 and theinterface layer 109 of the capacitor unit 111, and the interface layer127 and the interface layer 129 of the capacitor unit 113, also form acontinuous interface layers conformally surrounding the pole 112. Thesecond electrode 101 of the capacitor unit 111 and the second electrode121 of the capacitor unit 113 form a continuous electrode conformallysurrounding the pole 112 and the continuous dielectric layer. Forexample, the second electrode 101 and the second electrode 121 may beone piece continuous conductive metal formed at the same time.

In some other embodiments, the first electrode 103 of the capacitor unit111 contains a material different from the first electrode 123 of thecapacitor unit 113, the dielectric layer 105 of the capacitor unit 111contains a material different from the dielectric layer 125 of thecapacitor unit 113, or a second electrode 101 of the capacitor unit 111contains a material different from a second electrode 121 of thecapacitor unit 113. Similarly, the interface layer 107 or the interfacelayer 109 of the capacitor unit 111 may contain a material differentfrom materials in the interface layer 127 or the interface layer 129 ofthe capacitor unit 113.

In embodiments, the first electrode 103 of the capacitor unit 111 or thefirst electrode 123 of the capacitor unit 113, the dielectric layer 105of the capacitor unit 111 or the dielectric layer 125 of the capacitorunit 113, or the second electrode 101 of the capacitor unit 111 or thesecond electrode 121 of the capacitor unit 113 may enclose an area of asquare shape, a rectangular shape, a circle, an ellipse shape, a polygoncomprising three or more sides, or any other irregular shape. FIG. 1(a)shows the first electrode 103, the first electrode 123, the dielectriclayer 105, the dielectric layer 125 encloses a circle, while the secondelectrode 101 and the second electrode 121 encloses a square. Othershapes are possible for other embodiments. In some embodiments, thefirst electrode, the second electrode, the dielectric layer, and theinterface layers may enclose different shapes.

In embodiments, the first electrode 103 of the capacitor unit 111 has afirst circumference in a top down view and a first area, and the firstelectrode 123 of the capacitor unit 113 has a second circumference in atop down view and a second area. The first circumference may bedifferent from the second circumference, or the first area may bedifferent from the second area. Similarly, the second electrode, thedielectric layer, or the interface layers of different capacitor unitsmay have different circumferences or areas.

In embodiments, the first electrode, e.g., the first electrode 103 ofthe capacitor unit 111, or the first electrode 123 of the capacitor unit113, may include a first metallic material with a first work function,and the second electrode, e.g., the second electrode 101 of thecapacitor unit 111, or the second electrode 121 of the capacitor unit113, may include a second metallic material with a second work functiondifferent from the first work function. The first electrode 103, thefirst electrode 123, the second electrode 101, or the second electrode121, may include W, Mo, Ti, Ta, Al, TaN, TiN, TiC, WN, MoN, MoC, Co, Ni,Cu, Ru, Pd, Pt, Ir, IrOx, graphene, MnO₂, Li, RuOx, ITO, SrRuOx, a metaloxide, graphitic carbon, an alkali metal, a low-work-function metal, atransition metal oxide, a Co oxide, LiCoO2, NaCoO2, a transition metaldichalcogenide, a spinel oxide, LiMn₂O₄, LiNiMnO₄, a conducting polymer,or a conductive metal.

In embodiments, the dielectric layer 105 or the dielectric layer 125 mayinclude Al₂O₃, HfO₂, ZrO₂, TiO₂, Nb₂O₅, Ta₂O₅, SrTiOx, BaTiOx, Ga₂O₃,Y₂O₃, a rare earth oxide, a solid-state electrolyte, a glasselectrolyte, a ceramic electrolyte, an ionically-conductingantiperovskite, Li₃ClO, a doped Li_((3-2x))D_(x)ClO where D is adivalent cation dopant, hafnium silicate, zirconium silicate, hafniumdioxide, hafnium zirconate, zirconium dioxide, aluminum oxide, titaniumoxide, silicon nitride, carbon doped silicon nitride, silicon carbide,and nitride hafnium silicate, a high-k dielectric material, or an alloythereof. When the dielectric layer 105 or the dielectric layer 125includes a solid state electrolyte layer, the solid state electrolytelayer may include oxide, or a chalcogenide based layer.

In embodiments, the interface layer 107, the interface layer 109, theinterface layer 127, the interface layer 129, may include apseudocapacitive layer, and the pseudocapacitive layer includes RuO_(x),MnO_(x), VO_(x), an active redox center material, or a catalytic relaymaterial. For example, the dielectric layer 105 may be a solid-stateelectrolyte, and the interface layer 107 or the interface layer 109 maybe a pseudocapacitive layer in contact with the dielectric layer and anelectrode. The pseudocapacitive layer includes material with the activeredox couple where the faradaic reaction will take place. Thepseudocapacitive layer is in contact with an electrode and anelectrolyte in order for the pseudocapacitor to function as anelectrochemical energy storage device. In practice, pseudocapacitorsstore energy both electrostatically in an electric double layer andelectrochemically through Faradaic reactions.

In embodiments, the capacitor 110 may be a normal capacitor to storeinformation, a supercapacitor, an electrostatic double-layer capacitor(EDLC), an electrochemical capacitor, a pseudocapacitor, a redoxfaradaic reaction based pseudocapacitor, a lithium-ion capacitor, anelectrochemical energy storage device, or a hybridbattery-supercapacitor device. The capacitor 110 may have a dielectricbreakdown voltage of greater than about 1V and less than about 5V.

In embodiments, when the capacitor 110 is a normal capacitor, thedielectric layer 105 or the dielectric layer 125 may not be ionicallyconducting, i.e. not a solid-state electrolyte, but a high-k dielectricmaterial. When the capacitor 110 is a supercapacitor, the dielectriclayer 105 or the dielectric layer 125 may be a solid-state electrolyte,but without a pseudocapactive layer as an interface layer. In such acase, the capacitor 110 stores energy electrostatically, primarily in anelectric double layer at each electrode-electrolyte interface. When thecapacitor 110 functions primarily as a pseudocapacitor, the dielectriclayer 105 or the dielectric layer 125 is a solid-state electrolyte, anda pseudocapactive layer is present and in contact with both theelectrode and the solid-state electrolyte. In such a case, the capacitor110 stores energy both electrostatically in an electric double layer andelectrochemically through Faradaic reactions at eachelectrode-pseudocapactive layer-electrolyte interface. In someembodiments, a supercapacitor may further include a separated thin layerat the center of the electrolyte layer that acts as a separator.

FIG. 1(c) shows the device 100 includes an array of three dimensionalcapacitors, a capacitor 110, a capacitor 120, a capacitor 160, and more,in a cross section view. As described above for FIG. 1(a), the capacitor110 includes a pole 112, and one or more capacitor units, e.g., thecapacitor unit 111, the capacitor unit 113, and more, stacked around thepole 112. In embodiments, the pole 112 includes a conductive material,and functions as a first electrode for the capacitor 110. On the otherhand, the capacitor units of the capacitor 110 share a same secondelectrode 101. Similarly, the capacitor 120 includes a pole 122, and oneor more capacitor units stacked around the pole 122. In embodiments, thepole 122 includes a conductive material, and functions as a firstelectrode for the capacitor 120. On the other hand, the capacitor unitsof the capacitor 120 share a same second electrode 101, which is sharedwith the capacitor 110. Similarly, the capacitor 160 includes a pole162, and one or more capacitor units stacked around the pole 162. Inembodiments, the pole 162 includes a conductive material, and functionsas a first electrode for the capacitor 160. On the other hand, thecapacitor units of the capacitor 160 share a same second electrode 101,which is shared with the capacitor 110 and the capacitor 120.

The pole 112, the pole 122, and the pole 162 are coupled to a sharedelectrode 152 at a location 154, while the shared second electrode 101is coupled to a shared electrode 151 at a location 153. The sharedelectrode 151 or the shared electrode 152 may be coupled to a bus or apower rail. The capacitor 110, the capacitor 120, the capacitor 160, andmore, form a capacitor array embedded within a dielectric layer 161 anda dielectric layer 163.

FIG. 1(d) shows the device 100 with the capacitor 110, the capacitor120, the capacitor 160 in top down view, which is the same device 100 asshown in FIGS. 1(a)-1(c). A capacitor unit, e.g., the capacitor unit111, of the capacitor 110 includes the first electrode 103 surroundingand coupled to the pole 112, the dielectric layer 105 surrounding thefirst electrode 103, and the second electrode 101 surrounding thedielectric layer 105, the interface layer 107 between the firstelectrode 103 and the dielectric layer 105, and the interface layer 109between the dielectric layer 105 and the second electrode 101. The firstelectrode 103, the dielectric layer 105, the interface layer 107, theinterface layer 109, encloses an area of a circle shape. The secondelectrode 101 encloses an area of a square shape.

Similarly, a capacitor unit of the capacitor 120 includes a firstelectrode which is coupled to the pole 122, a dielectric layer 106surrounding the first electrode 122, and the second electrode 101surrounding the dielectric layer 106, an interface layer 104 between thefirst electrode 122 and the dielectric layer 106, and an interface layer108 between the dielectric layer 106 and the second electrode 101. Thefirst electrode 122, the dielectric layer 106, the interface layer 104,the interface layer 108, encloses an area of a circle shape.

In addition, a capacitor unit of the capacitor 160 includes a firstelectrode which is coupled to the pole 162, a dielectric layer 164surrounding the first electrode 102, and the second electrode 101surrounding the dielectric layer 164. The first electrode 162, or thedielectric layer 164 encloses an area of a square shape.

FIG. 1(e) shows the device 100 including an array of capacitors withvarious sizes as examples. Even though a capacitor may have multiplelayers, e.g., 3 layers or 5 layers of first electrode, dielectric layer,and interface layers, only two such layers, a layer 171 and a layer 172are shown as examples for calculation. The layer 171 may be a firstelectrode, and the layer 172 may be a dielectric layer. A capacitor mayhave multiple stacks, (#n1). For each bilayer in the stack (#n1), totalsurface area (SALH)=(2*pi*R*hbt+2*pi*(R+d)*h+2*pi*((R+d){circumflex over( )}2−R{circumflex over ( )}2)), where hbt and h are shown in FIG. 1(b).Total surface area per hole=SALH*#nl. Bitcell top down area(BCA)=P_(V)*P_(H). # of Bitcells/unit area=1/BCA. Total ‘Hole’ surfacearea per unit ‘Top down’ area=(1/BCA)*SALH*#nl.

FIG. 2 illustrates a process 200 for forming a semiconductor deviceincluding a three dimensional capacitor having one or more capacitorunits stacked around a pole, in accordance with some embodiments. Inembodiments, the process 200 may be applied to form the semiconductordevice 100 including the capacitor 110 having the capacitor unit 113stacked around a pole, as shown in FIG. 1(a).

At block 201, the process 200 includes forming a transistor, where thetransistor includes a channel along a first direction. For example, theprocess 200 may include the transistor 130, where the transistor 130includes the channel 134 along the horizontal direction, as shown inFIG. 1(a).

At block 203, the process 200 includes forming a pole placed in a seconddirection orthogonal to the first direction. For example, the process200 includes forming the pole 112 placed in the vertical directionorthogonal to the horizontal direction, as shown in FIG. 1(a).

At block 205, the process 200 includes forming a first electrodesurrounding and coupled to the pole. For example, the process 200includes forming the first electrode 123 surrounding and coupled to thepole 112, as shown in FIG. 1(a).

At block 207, the process 200 includes forming a dielectric layersurrounding the first electrode. For example, the process 200 includesforming the dielectric layer 125 surrounding the first electrode 123, asshown in FIG. 1(a).

At block 209, the process 200 includes forming a second electrodesurrounding the dielectric layer, where the first electrode, thedielectric layer, and the second electrode form a capacitor unit aroundthe pole. For example, the process 200 includes forming the secondelectrode 121 surrounding the dielectric layer 125, where the firstelectrode 123, the dielectric layer 125, and the second electrode 121form the capacitor unit 113 around the pole 112.

In addition, the process 200 may include additional operations. Forexample, the process 200 includes forming another capacitor unit abovethe capacitor unit formed in the blocks 201-209. In detail, forming thesecond capacitor unit includes forming a first electrode of the secondcapacitor unit surrounding and coupled to the pole and above the firstcapacitor unit, forming a dielectric layer of the second capacitor unitsurrounding the first electrode of the second capacitor, and forming asecond electrode of the second capacitor unit surrounding the dielectriclayer of the second capacitor. In some embodiments, the dielectric layerof the first capacitor unit and the dielectric layer of the secondcapacitor unit form a continuous dielectric layer conformallysurrounding the pole and the first electrodes of the first capacitorunit and the second capacitor unit, and the second electrode of thefirst capacitor and the second electrode of the second capacitor form acontinuous electrode. In addition, the process 200 may further includeforming an interface layer between the first electrode and thedielectric layer, or between the dielectric layer and the secondelectrode.

FIGS. 3(a)-3(b) schematically illustrate diagrams of semiconductordevices including a three dimensional capacitor having one or morecapacitor units stacked around a pole, in accordance with someembodiments. FIG. 3(a) shows a semiconductor device 300 including acapacitor 321 having one or more capacitor units stacked around a pole.In embodiments, the capacitor 321 may be a portion of a capacitor array320. FIG. 3(b) shows a semiconductor device 350 including a capacitor361 having one or more capacitor units stacked around a pole. Inembodiments, the capacitor 361 may be a portion of a capacitor array360. The capacitor 321 and the capacitor 361 may be similar to thecapacitor 110 as shown in FIG. 1(a).

In embodiments, as shown in FIG. 3(a), the device 300 includes asubstrate 301, a transistor 310 formed at the FEOL 302. In someembodiments, the transistor 310 may be a transistor of a processor. Thetransistor 310 includes a channel 311, a source electrode 312, and adrain electrode 313. The channel 311 may be in a horizontal direction315 from the source electrode 312 to the drain electrode 313 through thechannel 311. An interconnect structure 303 is formed in BEOL 304 of thedevice 300. A power rail 305 is coupled to the transistor 310, where thepower rail 305 is located at the BEOL 304.

In embodiments, the capacitor array 320 is formed above or within asubstrate 322, where the substrate 322 is different from the substrate301. Instead, the substrate 322 is coupled to the device 300 at thebackside through one or more connectors 307. The capacitor array 320includes the capacitor 321, where the first electrode or the secondelectrode of the capacitor 321 is coupled to a power rail 309. The powerrail 309 is coupled to the power rail 305 through one or more connectors307. In some embodiments, the connectors 307 may be a solder ball, amicro ball, or any other connectors. The capacitor 321 is coupled to thetransistor 310 through the power rail 305 located at BEOL 304 for thedevice 300, the connector 307, and the power rail 309.

In embodiments, as shown in FIG. 3(b), the device 350 includes asubstrate 341, a transistor 330 formed at the FEOL 342. In someembodiments, the transistor 330 may be a transistor of a processor. Thetransistor 330 includes a channel 331, a source electrode 332, and adrain electrode 333. The channel 331 may be in a horizontal direction335 from the source electrode 332 to the drain electrode 333 through thechannel 331. An interconnect structure 343 is formed in BEOL 344 of thedevice 350. A power rail 345 is coupled to the transistor 330, where thepower rail 345 is located at the BEOL 344.

In embodiments, the capacitor array 360 is formed above or within asubstrate 362, where the substrate 362 is different from the substrate341. Instead, the substrate 362 is directly coupled to the device 300 atthe backside, e.g., by direct bonding. The capacitor array 360 includesthe capacitor 361, where the first electrode or the second electrode ofthe capacitor 361 is coupled to a power rail 349. The power rail 349 iscoupled to the power rail 345 without going through a connector. Thecapacitor 361 is coupled to the transistor 330 through the power rail345 located at BEOL 344 for the device 300 and the power rail 349.

FIG. 4 illustrates an interposer 400 that includes one or moreembodiments of the disclosure. The interposer 400 is an interveningsubstrate used to bridge a first substrate 402 to a second substrate404. The first substrate 402 may be, for instance, a substrate supportfor a device, e.g., a processor 421 including a transistor 422. Thetransistor 422 may have a channel along a horizontal direction. Thesecond substrate 404 may be, for instance, a computer motherboard, acircuit board, or another integrated circuit die. Generally, the purposeof an interposer 400 is to spread a connection to a wider pitch or toreroute a connection to a different connection. For example, aninterposer 400 may couple an integrated circuit die to a ball grid array(BGA) 406 that can subsequently be coupled to the second substrate 404.In some embodiments, the first and second substrates 402/404 areattached to opposing sides of the interposer 400. In other embodiments,the first and second substrates 402/404 are attached to the same side ofthe interposer 400. And in further embodiments, three or more substratesare interconnected by way of the interposer 400.

In embodiments, the interposer 400 includes a capacitor 420, where thecapacitor 420 is coupled to the processor 421 through metalinterconnects 408, vias 410, or through-silicon vias (TSVs) 412. Inembodiments, the capacitor 420 includes a pole 424, and one or morecapacitor units, e.g., a capacitor unit 423, a capacitor unit 425, andmore, stacked around the pole 424, where the pole 424 is placed in avertical direction.

The interposer 400 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In further implementations, the interposer400 may be formed of alternate rigid or flexible materials that mayinclude the same materials described above for use in a semiconductorsubstrate, such as silicon, germanium, and other group III-V and groupIV materials.

The interposer 400 may include metal interconnects 408 and vias 410,including but not limited to through-silicon vias (TSVs) 412. Theinterposer 400 may further include embedded devices 414, including bothpassive and active devices. Such devices include, but are not limitedto, capacitors, decoupling capacitors, resistors, inductors, fuses,diodes, transformers, sensors, and electrostatic discharge (ESD)devices. More complex devices such as radio-frequency (RF) devices,power amplifiers, power management devices, antennas, arrays, sensors,and MEMS devices may also be formed on the interposer 400.

In accordance with embodiments of the disclosure, apparatuses orprocesses disclosed herein may be used in the fabrication of interposer400.

FIG. 5 illustrates a computing device 500 in accordance with oneembodiment of the disclosure. The computing device 500 may include anumber of components. In one embodiment, these components are attachedto one or more motherboards. In an alternate embodiment, some or all ofthese components are fabricated onto a single system-on-a-chip (SoC)die, such as a SoC used for mobile devices. The components in thecomputing device 500 include, but are not limited to, an integratedcircuit die 502 and at least one communications logic unit 508. In someimplementations the communications logic unit 508 is fabricated withinthe integrated circuit die 502 while in other implementations thecommunications logic unit 508 is fabricated in a separate integratedcircuit chip that may be bonded to a substrate or motherboard that isshared with or electronically coupled to the integrated circuit die 502.The integrated circuit die 502 may include a processor 504 as well ason-die memory 506, often used as cache memory, which can be provided bytechnologies such as embedded DRAM (eDRAM), or SRAM. For example, theon-die memory 506 may include multiple memory cells, where the memorycells may include a capacitor similar to the capacitors 110, 120, 160,or 420 as shown in FIGS. 1-4. The computing device 500 may also includea capacitor or a capacitor array 550 that is coupled to the processorintegrated circuit die 502, where the capacitor or the capacitor array550 may be similar to the capacitors 110, 120, 160, 420, or thecapacitor array 320, 360, as shown in FIGS. 1-4.

In embodiments, the computing device 500 may include a display or atouchscreen display 524, and a touchscreen display controller 526. Adisplay or the touchscreen display 524 may include a FPD, an AMOLEDdisplay, a TFT LCD, a micro light-emitting diode (μLED) display, orothers.

Computing device 500 may include other components that may or may not bephysically and electrically coupled to the motherboard or fabricatedwithin a SoC die. These other components include, but are not limitedto, volatile memory 510 (e.g., dynamic random access memory (DRAM),non-volatile memory 512 (e.g., ROM or flash memory), a graphicsprocessing unit 514 (GPU), a digital signal processor (DSP) 516, acrypto processor 542 (e.g., a specialized processor that executescryptographic algorithms within hardware), a chipset 520, at least oneantenna 522 (in some implementations two or more antenna may be used), abattery 530 or other power source, a power amplifier (not shown), avoltage regulator (not shown), a global positioning system (GPS) device528, a compass, a motion coprocessor or sensors 532 (that may include anaccelerometer, a gyroscope, and a compass), a microphone (not shown), aspeaker 534, a camera 536, user input devices 538 (such as a keyboard,mouse, stylus, and touchpad), and a mass storage device 540 (such ashard disk drive, compact disk (CD), digital versatile disk (DVD), and soforth). The computing device 500 may incorporate further transmission,telecommunication, or radio functionality not already described herein.In some implementations, the computing device 500 includes a radio thatis used to communicate over a distance by modulating and radiatingelectromagnetic waves in air or space. In further implementations, thecomputing device 500 includes a transmitter and a receiver (or atransceiver) that is used to communicate over a distance by modulatingand radiating electromagnetic waves in air or space.

The communications logic unit 508 enables wireless communications forthe transfer of data to and from the computing device 500. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communications logic unit 508 mayimplement any of a number of wireless standards or protocols, includingbut not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+,HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Infrared (IR), Near FieldCommunication (NFC), Bluetooth, derivatives thereof, as well as anyother wireless protocols that are designated as 3G, 4G, 5G, and beyond.The computing device 500 may include a plurality of communications logicunits 508. For instance, a first communications logic unit 508 may bededicated to shorter range wireless communications such as Wi-Fi, NFC,and Bluetooth and a second communications logic unit 508 may bededicated to longer range wireless communications such as GPS, EDGE,GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

The processor 504 of the computing device 500 includes one or moredevices, such as transistors. The term “processor” may refer to anydevice or portion of a device that processes electronic data fromregisters and/or memory to transform that electronic data into otherelectronic data that may be stored in registers and/or memory. Thecommunications logic unit 508 may also include one or more devices, suchas transistors.

In further embodiments, another component housed within the computingdevice 500 may contain one or more devices, such as DRAM, that areformed in accordance with implementations of the current disclosure.

In various embodiments, the computing device 500 may be a laptopcomputer, a netbook computer, a notebook computer, an ultrabookcomputer, a smartphone, a dumbphone, a tablet, a tablet/laptop hybrid, apersonal digital assistant (PDA), an ultra mobile PC, a mobile phone, adesktop computer, a server, a printer, a scanner, a monitor, a set-topbox, an entertainment control unit, a digital camera, a portable musicplayer, or a digital video recorder. In further implementations, thecomputing device 500 may be any other electronic device that processesdata.

Some Non-Limiting Examples are Provided Below.

Example 1 may include a semiconductor device, comprising: a threedimensional capacitor including: a pole; and one or more capacitor unitsstacked around the pole, wherein a capacitor unit of the one or morecapacitor units includes: a first electrode surrounding and coupled tothe pole, a dielectric layer surrounding the first electrode, and asecond electrode surrounding the dielectric layer.

Example 2 may include the semiconductor device of example 1 and/or someother examples herein, further comprising: a transistor, wherein thetransistor includes a channel along a first direction, and wherein thepole is placed in a second direction orthogonal to the first direction.

Example 3 may include the semiconductor device of example 1 and/or someother examples herein, wherein the capacitor unit is a first capacitorunit, and the capacitor further includes a second capacitor unit, andwherein a dielectric layer of the first capacitor unit and a dielectriclayer of the second capacitor unit form a continuous dielectric layerconformally surrounding the pole and the first electrodes of the firstcapacitor unit and the second capacitor unit, and the second electrodeof the first capacitor and the second electrode of the second capacitorform a continuous electrode.

Example 4 may include the semiconductor device of example 1 and/or someother examples herein, wherein the capacitor unit is a first capacitorunit, and the capacitor further includes a second capacitor unit, andwherein a first electrode of the first capacitor unit contains amaterial different from a first electrode of the second capacitor unit,or a dielectric layer of the first capacitor unit contains a materialdifferent from a dielectric layer of the second capacitor unit.

Example 5 may include the semiconductor device of example 1 and/or someother examples herein, wherein the capacitor includes a first capacitorunit with a first electrode having a first circumference in a top downview and a first area, and a second capacitor unit with a firstelectrode having a second circumference in a top down view and a secondarea, and wherein the first circumference is different from the secondcircumference, or the first area is different from the second area.

Example 6 may include the semiconductor device of example 1 and/or someother examples herein, wherein the first electrode, the dielectriclayer, or the second electrode encloses an area of a square shape, arectangular shape, a circle, an ellipse shape, or a polygon comprisingthree or more sides.

Example 7 may include the semiconductor device of example 1 and/or someother examples herein, wherein the first electrode includes a firstmetallic material with a first work function, and the second electrodeincludes a second metallic material with a second work functiondifferent from the first work function.

Example 8 may include the semiconductor device of example 1 and/or someother examples herein, wherein the first electrode or the secondelectrode includes W, Mo, Ti, Ta, Al, TaN, TiN, TiC, WN, MoN, MoC, Co,Ni, Cu, Ru, Pd, Pt, Ir, IrOx, graphene, MnO₂, Li, RuOx, ITO, SrRuOx, ametal oxide, graphitic carbon, an alkali metal, a low-work-functionmetal, a transition metal oxide, a Co oxide, LiCoO₂, NaCoO₂, atransition metal dichalcogenide, a spinel oxide, LiMn₂O₄, LiNiMnO₄, aconducting polymer, or a conductive metal.

Example 9 may include the semiconductor device of example 1 and/or someother examples herein, wherein the dielectric layer includes Al₂O₃,HfO₂, ZrO₂, TiO₂, Nb₂O₅, Ta₂O₅, SrTiOx, BaTiOx, Ga₂O₃, Y₂O₃, a rareearth oxide, a solid-state electrolyte, a glass electrolyte, a ceramicelectrolyte, an ionically-conducting antiperovskite, Li₃ClO, a dopedLi_((3-2x))D_(x)ClO where D is a divalent cation dopant, hafniumsilicate, zirconium silicate, hafnium dioxide, hafnium zirconate,zirconium dioxide, aluminum oxide, titanium oxide, silicon nitride,carbon doped silicon nitride, silicon carbide, and nitride hafniumsilicate, a high-k dielectric material, or an alloy thereof.

Example 10 may include the semiconductor device of example 9 and/or someother examples herein, wherein the solid state electrolyte layerincludes oxide, or a chalcogenide based layer.

Example 11 may include the semiconductor device of example 1 and/or someother examples herein, wherein the capacitor unit further includes aninterface layer between the first electrode and the dielectric layer, orbetween the dielectric layer and the second electrode.

Example 12 may include the semiconductor device of example 11 and/orsome other examples herein, wherein the interface layer includes apseudocapacitive layer, and wherein the pseudocapacitive layer includesRuO_(x), MnO_(x), VO_(x), an active redox center material, or acatalytic relay material.

Example 13 may include the semiconductor device of example 1 and/or someother examples herein, wherein the first electrode or the secondelectrode is coupled to a power rail.

Example 14 may include the semiconductor device of example 1 and/or someother examples herein, wherein the three dimensional capacitor is asupercapacitor, an electrostatic double-layer capacitor (EDLC), anelectrochemical capacitor, a pseudocapacitor, a redox faradaic reactionbased pseudocapacitor, a lithium-ion capacitor, an electrochemicalenergy storage device, or a hybrid battery-supercapacitor device.

Example 15 may include the semiconductor device of example 1 and/or someother examples herein, wherein the capacitor is located at an interposercoupled to a processor, or at backside of a processor.

Example 16 may include the semiconductor device of example 1 and/or someother examples herein, wherein the three dimensional capacitor has adielectric breakdown voltage of greater than about 1V and less thanabout 5V.

Example 17 may include a method for forming a semiconductor device, themethod comprising: forming a transistor, wherein the transistor includesa channel along a first direction; forming a pole placed in a seconddirection orthogonal to the first direction; forming a first electrodesurrounding and coupled to the pole; forming a dielectric layersurrounding the first electrode, and forming a second electrodesurrounding the dielectric layer, wherein the first electrode, thedielectric layer, and the second electrode form a capacitor unit aroundthe pole.

Example 18 may include the method of example 17 and/or some otherexamples herein, wherein the capacitor unit is a first capacitor unit,and the method further comprises: forming a second capacitor unit abovethe first capacitor unit, wherein forming the second capacitor unitincludes: forming a first electrode of the second capacitor unitsurrounding and coupled to the pole and above the first capacitor unit;forming a dielectric layer of the second capacitor unit surrounding thefirst electrode of the second capacitor, and forming a second electrodeof the second capacitor unit surrounding the dielectric layer of thesecond capacitor.

Example 19 may include the method of example 18 and/or some otherexamples herein, wherein the dielectric layer of the first capacitorunit and the dielectric layer of the second capacitor unit form acontinuous dielectric layer conformally surrounding the pole and thefirst electrodes of the first capacitor unit and the second capacitorunit, and the second electrode of the first capacitor and the secondelectrode of the second capacitor form a continuous electrode.

Example 20 may include the method of example 17 and/or some otherexamples herein, further comprising: forming an interface layer betweenthe first electrode and the dielectric layer, or between the dielectriclayer and the second electrode.

Example 21 may include a computing device, comprising: a transistorincluding a channel along a first direction located in a semiconductordevice; and a three dimensional capacitor coupled to the transistor,wherein the three dimensional capacitor includes a pole, and one or morecapacitor units stacked around the pole placed in a second directionorthogonal to the first direction, wherein a capacitor unit of the oneor more capacitor units includes: a first electrode surrounding andcoupled to the pole, a dielectric layer surrounding the first electrode,and a second electrode surrounding the dielectric layer.

Example 22 may include the computing device of example 21 and/or someother examples herein, wherein the transistor is a part of a processor.

Example 23 may include the computing device of example 21 and/or someother examples herein, wherein the three dimensional capacitor iscoupled to the transistor through a power rail located at back end ofline for the semiconductor device.

Example 24 may include the computing device of example 21 and/or someother examples herein, wherein the three dimensional capacitor islocated in an interposer.

Example 25 may include the computing device of example 21 and/or someother examples herein, wherein the computing device is a wearable deviceor a mobile computing device, the wearable device or the mobilecomputing device including one or more of an antenna, a touchscreencontroller, a display, a battery, a processor, an audio codec, a videocodec, a power amplifier, a global positioning system (GPS) device, acompass, a Geiger counter, an accelerometer, a gyroscope, a speaker, ora camera coupled with the memory device.

Various embodiments may include any suitable combination of theabove-described embodiments including alternative (or) embodiments ofembodiments that are described in conjunctive form (and) above (e.g.,the “and” may be “and/or”). Furthermore, some embodiments may includeone or more articles of manufacture (e.g., non-transitorycomputer-readable media) having instructions, stored thereon, that whenexecuted result in actions of any of the above-described embodiments.Moreover, some embodiments may include apparatuses or systems having anysuitable means for carrying out the various operations of theabove-described embodiments.

The above description of illustrated implementations, including what isdescribed in the Abstract, is not intended to be exhaustive or to limitthe embodiments of the present disclosure to the precise formsdisclosed. While specific implementations and examples are describedherein for illustrative purposes, various equivalent modifications arepossible within the scope of the present disclosure, as those skilled inthe relevant art will recognize.

These modifications may be made to embodiments of the present disclosurein light of the above detailed description. The terms used in thefollowing claims should not be construed to limit various embodiments ofthe present disclosure to the specific implementations disclosed in thespecification and the claims. Rather, the scope is to be determinedentirely by the following claims, which are to be construed inaccordance with established doctrines of claim interpretation.

What is claimed is:
 1. An integrated circuit structure, comprising: apole; a first disc electrode surrounding and in contact with a firstportion of the pole; a second disc electrode surrounding and in contactwith a second portion of the pole, the second disc electrode over andspaced apart from the first disc electrode; a dielectric layersurrounding and continuous between the first disc electrode and thesecond disc electrode, the dielectric layer along the pole between thefirst disc electrode and the second disc electrode; and an electrodelayer surrounding the dielectric layer, the electrode layer along thepole between the first disc electrode and the second disc electrode. 2.The integrated circuit structure of claim 1, further comprising: a thirddisc electrode surrounding and in contact with a third portion of thepole, the third disc electrode over and spaced apart from the seconddisc electrode, wherein the dielectric layer is further surrounding thethird disc electrode and is continuous between the third disc electrodeand the second disc electrode, the dielectric layer along the polebetween the third disc electrode and the second disc electrode, andwherein the electrode layer is further along the pole between the thirddisc electrode and the second disc electrode.
 3. The integrated circuitstructure of claim 1, further comprising: a transistor, wherein thetransistor includes a channel along a first direction, and wherein thepole is along a second direction orthogonal to the first direction. 4.The integrated circuit structure of claim 1, wherein the first discelectrode and the second disc electrode have a same circumference. 5.The integrated circuit structure of claim 1, wherein the first discelectrode has a circumference different than a circumference of thesecond disc electrode.
 6. The integrated circuit structure of claim 1,wherein the first and second disc electrodes includes a first metallicmaterial with a first work function, and the electrode layer includes asecond metallic material with a second work function different from thefirst work function.
 7. The integrated circuit structure of claim 1,wherein the first and second disc electrodes comprise W, Mo, Ti, Ta, Al,TaN, TiN, TiC, WN, MoN, MoC, Co, Ni, Cu, Ru, Pd, Pt, Ir, IrOx, graphene,MnO₂, Li, RuOx, ITO, SrRuOx, a metal oxide, graphitic carbon, an alkalimetal, a low-work-function metal, a transition metal oxide, a Co oxide,LiCoO₂, NaCoO₂, a transition metal dichalcogenide, a spinel oxide,LiMn₂O₄, LiNiMnO₄, a conducting polymer, or a conductive metal.
 8. Theintegrated circuit structure of claim 1, wherein the dielectric layercomprises Al₂O₃, HfO₂, ZrO₂, TiO₂, Nb₂O₅, Ta₂O₅, SrTiOx, BaTiOx, Ga₂O₃,Y₂O₃, a rare earth oxide, a solid-state electrolyte, a glasselectrolyte, a ceramic electrolyte, an ionically-conductingantiperovskite, Li₃ClO, a doped Li_((3-2x))D_(x)ClO where D is adivalent cation dopant, hafnium silicate, zirconium silicate, hafniumdioxide, hafnium zirconate, zirconium dioxide, aluminum oxide, titaniumoxide, silicon nitride, carbon doped silicon nitride, silicon carbide,and nitride hafnium silicate, a high-k dielectric material, or an alloythereof.
 9. The integrated circuit structure of claim 8, wherein thesolid state electrolyte layer includes oxide, or a chalcogenide basedlayer.
 10. The integrated circuit structure of claim 1, furthercomprising: an interface layer between the dielectric layer and thefirst and second disc electrodes.
 11. The integrated circuit structureof claim 1, further comprising: an interface layer between thedielectric layer and the electrode layer.
 12. The integrated circuitstructure of claim 1, further comprising: a first interface layerbetween the dielectric layer and the first and second disc electrodes;and a second interface layer between the dielectric layer and theelectrode layer.
 13. The integrated circuit structure of claim 1,wherein the first and second disc electrodes are coupled to a powerrail.
 14. The integrated circuit structure of claim 1, wherein theelectrode layer is coupled to a power rail.
 15. A computing device,comprising: a board; and a component coupled to the board, the componentincluding an integrated circuit structure, the integrated circuitstructure comprising: a pole; a first disc electrode surrounding and incontact with a first portion of the pole; a second disc electrodesurrounding and in contact with a second portion of the pole, the seconddisc electrode over and spaced apart from the first disc electrode; adielectric layer surrounding and continuous between the first discelectrode and the second disc electrode, the dielectric layer along thepole between the first disc electrode and the second disc electrode; andan electrode layer surrounding the dielectric layer, the electrode layeralong the pole between the first disc electrode and the second discelectrode.
 16. The computing device of claim 15, further comprising: amemory coupled to the board.
 17. The computing device of claim 15,further comprising: a communication chip coupled to the board.
 18. Thecomputing device of claim 15, further comprising: a battery coupled tothe board.
 19. The computing device of claim 15, further comprising: acamera coupled to the board.
 20. The computing device of claim 15,wherein the component is a packaged integrated circuit die.